Semiconductor device and method for fabricating the same

ABSTRACT

A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a contact etch stop layer (CESL) on the gate structure, forming an interlayer dielectric (ILD) layer around the gate structure, performing a curing process so that an oxygen concentration of the CESL is different from the oxygen concentration of the ILD layer, and then performing a replacement metal gate process (RMG) process to transform the gate structure into a metal gate.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. application Ser. No. 15/790,043filed Oct. 22, 2017, and incorporated herein by reference in itsentirety.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The invention relates to a method for fabricating semiconductor device,and more particularly to a method of using curing process to lower theoverlap capacitance (C_(ov)) after forming interlayer dielectric (ILD)layer.

2. Description of the Prior Art

In current semiconductor industry, polysilicon has been widely used as agap-filling material for fabricating gate electrode ofmetal-oxide-semiconductor (MOS) transistors. However, the conventionalpolysilicon gate also faced problems such as inferior performance due toboron penetration and unavoidable depletion effect which increasesequivalent thickness of gate dielectric layer, reduces gate capacitance,and worsens driving force of the devices. In replacing polysilicongates, work function metals have been developed to serve as a controlelectrode working in conjunction with high-K gate dielectric layers.

However, in current fabrication of high-k metal transistor, sinceelements such as spacer and contact etch stop layer (CESL) are typicallymade of material having substantially higher dielectric constant, theoverlap capacitance between gate structure and source/drain region couldnot have been controlled under a desirable range thereby affecting theperformance of the device substantially. Hence, how to resolve thisissue has become an important task in this field.

SUMMARY OF THE INVENTION

According to an embodiment of the present invention, a method forfabricating semiconductor device includes the steps of first forming agate structure on a substrate, forming a contact etch stop layer (CESL)on the gate structure, forming an interlayer dielectric (ILD) layeraround the gate structure, performing a curing process so that an oxygenconcentration of the CESL is different from the oxygen concentration ofthe ILD layer, and then performing a replacement metal gate process(RMG) process to transform the gate structure into a metal gate.

According to another aspect of the present invention, a semiconductordevice includes: a gate structure on a substrate; a spacer around thegate structure; a contact etch stop layer (CESL) adjacent to the spacer;and an interlayer dielectric (ILD) layer around the CESL. Preferably, anoxygen concentration in the CESL and an oxygen concentration in the ILDlayer are different.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-5 illustrate a method for fabricating a semiconductor deviceaccording to an embodiment of the present invention.

DETAILED DESCRIPTION

Referring to FIGS. 1-5, FIGS. 1-5 illustrate a method for fabricating asemiconductor device according to an embodiment of the presentinvention. As shown in FIG. 1, a substrate 12, such as a siliconsubstrate or silicon-on-insulator (SOI) substrate is first provided, andat least a transistor region such as a NMOS region or a PMOS region aredefined on the substrate 12. Next, at least a fin-shaped structure 14 isformed on the substrate 12, in which the bottom of the fin-shapedstructure 14 is surrounded by an insulating layer or shallow trenchisolation (STI) made of material including but not limited to forexample silicon oxide. It should be noted that even though thisembodiment pertains to the fabrication of a non-planar FET device suchas FinFET device, it would also be desirable to apply the followingprocesses to a planar FET device, which is also within the scope of thepresent invention.

According to an embodiment of the present invention, the fin-shapedstructure 14 could be obtained by a sidewall image transfer (SIT)process. For instance, a layout pattern is first input into a computersystem and is modified through suitable calculation. The modified layoutis then defined in a mask and further transferred to a layer ofsacrificial layer on a substrate through a photolithographic and anetching process. In this way, several sacrificial layers distributedwith a same spacing and of a same width are formed on a substrate. Eachof the sacrificial layers may be stripe-shaped. Subsequently, adeposition process and an etching process are carried out such thatspacers are formed on the sidewalls of the patterned sacrificial layers.In a next step, sacrificial layers can be removed completely byperforming an etching process. Through the etching process, the patterndefined by the spacers can be transferred into the substrate underneath,and through additional fin cut processes, desirable pattern structures,such as stripe patterned fin-shaped structures could be obtained.

Alternatively, the fin-shaped structure 14 could also be obtained byfirst forming a patterned mask (not shown) on the substrate, 12, andthrough an etching process, the pattern of the patterned mask istransferred to the substrate 12 to form the fin-shaped structure.Moreover, the formation of the fin-shaped structure could also beaccomplished by first forming a patterned hard mask (not shown) on thesubstrate 12, and a semiconductor layer composed of silicon germanium isgrown from the substrate 12 through exposed patterned hard mask viaselective epitaxial growth process to form the corresponding fin-shapedstructure. These approaches for forming fin-shaped structure are allwithin the scope of the present invention.

Next, at least a gate structure 16 or dummy gate is formed on thesubstrate 12. In this embodiment, the formation of the gate structures16 could be accomplished by a gate first process, a high-k firstapproach from gate last process, or a high-k last approach from gatelast process. Since this embodiment pertains to a high-k last approach,a gate dielectric layer 18 or interfacial layer, a gate material layer20 made of polysilicon, a first hard mask 22, and a second hard mask 24could be formed sequentially on the substrate 12, and a pattern transferprocess is then conducted by using a patterned resist (not shown) asmask to remove part of the second hard mask 24, part of the first hardmask 22, part of the gate material layer 20 and part of the gatedielectric layer 18 through single or multiple etching processes. Afterstripping the patterned resist, gate structures 16 each composed of apatterned gate dielectric layer 18, a patterned gate material layer 20,a patterned first hard mask 22, and a patterned second hard mask 24 areformed on the substrate 12.

Next, at least a spacer 26 is formed on the sidewalls of the each of thegate structures 16, a source/drain region 32 and/or epitaxial layer 34is formed in the fin-shaped structure 14 adjacent to two sides of thespacer 26, selective silicide layers (not shown) could be formed on thesurface of the source/drain regions 32, and a contact etch stop layer(CESL) 36 is formed on the surface of the fin-shaped structure 14 andthe gate structures 16. In this embodiment, the spacer 26 could be asingle spacer or a composite spacer, such as a spacer including but notlimited to for example an offset spacer 28 and a main spacer 30.Preferably, the offset spacer 28 and the main spacer 30 could includesame material or different material while both the offset spacer 28 andthe main spacer 30 could be made of material including but not limitedto for example SiO₂, SiN, SiON, SiCN, or combination thereof. Thesource/drain regions 32 could include n-type dopants or p-type dopantsdepending on the type of device being fabricated. The CESL 36 ispreferably made of SiN or SiCN, but not limited thereto.

Next, as shown in FIG. 2, an interlayer dielectric (ILD) layer 38 madeof silicon dioxide or silicon oxycarbide (SiOC) is formed on the CESL36, and a curing process is conducted to increase the strength of themain spacer 30. Specifically, the curing process preferably includes anextreme ultraviolet (EUV) curing process, in which the curing process isaccomplished by injecting ozone (O₃) along with a thermal treatmentprocess during ultraviolet light irradiation. This alters the dielectricconstant of the spacer 26 and the CESL 36 and at the same time lowersthe overlap capacitance (C_(ov)) between the gate structure 16 and thesource/drain region 32.

It should be noted that the main spacer 30 and the CESL 36 of thisembodiment are preferably made of dielectric material having slightlyhigher dielectric constant before the curing process. For instance, boththe main spacer 30 and the CESL 36 are preferably made of SiCN. By usingthe aforementioned thermal treatment process to drive oxygen atom fromozone into the main spacer 30, the CESL 36, and the ILD layer 38 duringthe curing process, it would be desirable to transform the material ofthe main spacer 30, CESL 36, and ILD layer 38 into a material havingsubstantially lower dielectric constant after the curing process.Specifically, the main spacer 30 and CESL 36 both originally made ofSiCN are preferably transformed into material having lower dielectricconstant such as SiOCN after drive-in of oxygen while the material ofthe ILD layer 38 originally made of SiOC remains unchanged.

Moreover, the dielectric constant of the main spacer 30, CESL 36, andILD layer 38 are also slightly adjusted after the curing process isconducted. For instance, the main spacer 30 originally made of SiCNhaving a dielectric constant of about 5.0 is preferably transformed intoSiOCN having a dielectric constant of about 4.6, the CESL 36 originallymade of SiCN having a dielectric constant of about 5.0 or slightlyhigher than 5.0 is also transformed into SiOCN having a dielectricconstant of about 4.6, and the ILD layer 38 originally made of SiOChaving a dielectric constant of about 4.6 remains same material anddielectric constant. In other words, the main spacer 30, CESL 36, andILD layer 38 originally having different dielectric constants arepreferably transformed into either same material or different materialall sharing same dielectric constant after the curing process. It is tobe noted that since the offset spacer 28 made of SiCN is disposed closeto the gate structure 16 and virtually no oxygen atoms were driven intothe offset spacer 28 during the curing process, the dielectric constantof the offset spacer 28 (preferably around 5.0) remains relativelyconstant before and after the curing process and is also slightly higherthan the dielectric constant of the main spacer 30 after the curingprocess.

It should further be noted that even though the main spacer 30 and theCESL 36 are both composed of SiCN in the aforementioned embodiment,according to an embodiment of the present invention, either one of themain spacer 30 or the CESL 36 or both the main spacer 30 and the CESLcould be made of SiN having dielectric constant of approximately 6.5before the curing process. In this instance, after the curing process isconducted and oxygen atoms were driven into the main spacer 30 and theCESL 36, the material of the main spacer 30 and the CESL 36 would betransformed from SiN to silicon oxynitride (SiON) and the dielectricconstant of the two elements 30 and 36 would also be lowered to besubstantially equal to the dielectric constant of the ILD layer 38,which is also within the scope of the present invention.

Viewing from another perspective, since oxygen atoms were driven fromthe ozone into the main spacer 30, CESL 36, and ILD layer 36 by thermaltreatment during the curing process, the oxygen concentration in theCESL 36 is preferably different form the oxygen concentration in the ILDlayer 38 after the curing process. Preferably, the oxygen concentrationin the ILD layer 38 is greater than the oxygen concentration in the CESL36 after the curing process is conducted, or if viewed from a moredetailed perspective, the oxygen concentration on a surface of the CESL36 is also greater than the oxygen concentration within the CESL 36.

In this embodiment, the temperature of the thermal treatment in thecuring process is between 500° C. to 800° C., the pressure of the curingprocess is between 1 Torr to 760 Torr, and the duration of the curingprocess is between 50 minutes to 70 minutes and most preferably at 60minutes.

Next, as shown in FIG. 3, a planarizing process such as chemicalmechanical polishing (CMP) process is conducted to remove part of theILD layer 32 and part of the CESL 30 to expose the second hard masks 24so that the top surfaces of the second hard masks 24 and the ILD layer32 are coplanar. It should be noted that even though the curing processis conducted before the planarizing process in the aforementionedembodiment, according to an embodiment of the present invention, itwould also be desirable to conduct the curing process after theplanarizing process is completed such as by conducting the curingprocess after the top surface of the second hard mask 24 is even withthe top surfaces of the ILD layer 38, which is also within the scope ofthe present invention.

Next, as shown in FIG. 4, a replacement metal gate (RMG) process isconducted to transform each of the gate structures 16 into metal gate.For instance, the RMG process could be accomplished by first performinga selective dry etching or wet etching process using etchants includingbut not limited to for example ammonium hydroxide (NH₄OH) ortetramethylammonium hydroxide (TMAH) to remove the second hard mask 24,the first hard mask 22, the gate material layer 20, and even the gatedielectric layer 18 to form recesses (not shown) in the ILD layer 38.Next, a selective interfacial layer or gate dielectric layer 40, ahigh-k dielectric layer 42, a work function metal layer 44, and a lowresistance metal layer 46 are formed in the recesses, and a planarizingprocess such as CMP is conducted to remove part of low resistance metallayer 46, part of work function metal layer 44, and part of high-kdielectric layer 42 to form gate structures made of metal gates 48. Inthis embodiment, the gate structure or metal gates 48 fabricated throughhigh-k last process of a gate last process preferably includes aninterfacial layer or gate dielectric layer 40, a U-shaped high-kdielectric layer 42, a U-shaped work function metal layer 44, and a lowresistance metal layer 46.

In this embodiment, the high-k dielectric layer 42 is preferablyselected from dielectric materials having dielectric constant (k value)larger than 4. For instance, the high-k dielectric layer 42 may beselected from hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO₄),hafnium silicon oxynitride (HfSiON), aluminum oxide (Al₂O₃), lanthanumoxide (La₂O₃), tantalum oxide (Ta₂O₅), yttrium oxide (Y₂O₃), zirconiumoxide (ZrO₂), strontium titanate oxide (SrTiO₃), zirconium silicon oxide(ZrSiO₄), hafnium zirconium oxide (HfZrO₄), strontium bismuth tantalate(SrBi₂Ta₂O₉, SBT), lead zirconate titanate (PbZr_(x)Ti_(1-x)O₃, PZT),barium strontium titanate (Ba_(x)Sr_(1-x)TiO₃, BST) or a combinationthereof.

In this embodiment, the work function metal layer 44 is formed fortuning the work function of the metal gate in accordance with theconductivity of the device. For an NMOS transistor, the work functionmetal layer 44 having a work function ranging between 3.9 eV and 4.3 eVmay include titanium aluminide (TiAl), zirconium aluminide (ZrAl),tungsten aluminide (WAl), tantalum aluminide (TaAl), hafnium aluminide(HfAl), or titanium aluminum carbide (TiAlC), but it is not limitedthereto. For a PMOS transistor, the work function metal layer 44 havinga work function ranging between 4.8 eV and 5.2 eV may include titaniumnitride (TiN), tantalum nitride (TaN), tantalum carbide (TaC), but it isnot limited thereto. An optional barrier layer (not shown) could beformed between the work function metal layer 44 and the low resistancemetal layer 46, in which the material of the barrier layer may includetitanium (Ti), titanium nitride (TiN), tantalum (Ta) or tantalum nitride(TaN). Furthermore, the material of the low-resistance metal layer 46may include copper (Cu), aluminum (Al), titanium aluminum (TiAl), cobalttungsten phosphide (CoWP) or any combination thereof.

Next, as shown in FIG. 5, part of the low resistance metal layer 46,part of the work function metal layer 44, and part of the high-kdielectric layer 42 are removed to form another recess (not shown), andhard masks 50 made of dielectric material including but not limited tofor example silicon nitride are deposited into the recesses so that thetop surfaces of the hard masks 50 and ILD layer 38 are coplanar.

Next, a photo-etching process is conducted by using a patterned mask(not shown) as mask to remove part of the ILD layer 38 adjacent to themetal gates 48 for forming contact holes (not shown) exposing thesource/drain regions 32 underneath. Next, metals including a barrierlayer selected from the group consisting of Ti, TiN, Ta, and TaN and alow resistance metal layer selected from the group consisting of W, Cu,Al, TiAl, and CoWP are deposited into the contact holes, and aplanarizing process such as CMP is conducted to remove part ofaforementioned barrier layer and low resistance metal layer for formingcontact plugs 52 electrically connecting the source/drain region 32.This completes the fabrication of a semiconductor device according to apreferred embodiment of the present invention.

Referring again to FIG. 5, which further illustrates a structural viewof a semiconductor device according to an embodiment of the presentinvention. As shown in FIG. 5, the semiconductor device preferablyincludes at least a gate structure or metal gate 48 on the substrate 12or fin-shaped structure 14, a spacer 26 around the gate structure, aCESL 36 adjacent to the spacer 26, and an ILD layer 38 around the CESL36, in which the spacer 26 further includes an offset spacer 28 and amain spacer 30.

In this embodiment, since oxygen atoms are driven into the main spacer30, CESL 36, and ILD layer 38 through thermal treatment during thecuring process, the oxygen concentration in the CESL 36 is preferablydifferent from the oxygen concentration in the ILD layer 38.Specifically, the oxygen concentration in the ILD layer 38 is greaterthan the oxygen concentration in the CESL 36 and more specifically theoxygen concentration on a surface of the CESL 36 is further greater thanthe oxygen concentration inside the CESL 36.

Moreover, both the CESL 36 and the ILD layer 38 preferably share samedielectric constant after the curing process is conducted, or accordingto an embodiment of the present invention, the main spacer 30, CESL 36,and ILD layer 38 all share same dielectric constant after the curingprocess. The dielectric constant of the offset spacer 28 on the otherhand is slightly greater than the dielectric constant of the main spacer30, CESL 36, and ILD layer 38 after the curing process.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A method for fabricating semiconductor device,comprising: forming a gate structure on a substrate; forming a contactetch stop layer (CESL) on the gate structure; forming an interlayerdielectric (ILD) layer around the gate structure; performing a curingprocess while the CESL is on the gate structure; and performing areplacement metal gate process (RMG) process to transform the gatestructure into a metal gate.
 2. The method of claim 1, furthercomprising: forming the ILD layer on the CESL; performing the curingprocess so that an oxygen concentration in the CESL and an oxygenconcentration in the ILD layer are different.
 3. The method of claim 2,wherein the oxygen concentration in the ILD layer is greater than theoxygen concentration in the CESL.
 4. The method of claim 2, wherein theoxygen concentration on a surface of the CESL is greater than the oxygenconcentration in the CESL.
 5. The method of claim 1, further comprisingperforming the curing process so that the CESL and the ILD layercomprise same dielectric constant.
 6. The method of claim 1, furthercomprising forming a spacer around the gate structure, wherein thespacer comprises an offset spacer and a main spacer.
 7. The method ofclaim 6, further comprising performing the curing process so that themain spacer, the CESL, and the ILD layer comprise same dielectricconstant.
 8. The method of claim 1, further comprising: performing aplanarizing process to remove part of the ILD layer; and performing theRMG process.
 9. The method of claim 1, wherein a temperature of thecuring process is between 500° C. to 800° C.
 10. The method of claim 1,wherein a duration of the curing process is between 50 minutes to 70minutes.